Download Structure of Inversion Boundaries in Doped ZnO: Atomic-Scale Insights from Electron Microscopy and Quantum Chemical Calculations 2026
This book explores the atomic-scale structure and stability of inversion boundaries (IBs) in antimony- and tin-doped wurtzite zinc oxide (ZnO), a semiconductor widely studied for its distinctive electronic, optical, and charge-transport characteristics. Through a combination of high-resolution electron microscopy, density functional theory (DFT), and image-based computational modeling, it investigates how dopants with higher oxidation states affect polarity reversal, atomic arrangements, defect formation, and the stability of crystal stacking sequences.
A key focus is the relationship between dopant incorporation and the formation of planar defects within the ZnO crystal structure. The research introduces a precise analytical approach capable of predicting atomic configurations with a confidence level corresponding to better than 1 pm accuracy. By bringing experimental observations together with theoretical calculations, the study provides new explanations for previously unresolved aspects of inversion boundaries and presents a methodology that can be applied to investigate similar defects in other functional materials.
Offering valuable insights into semiconductor structures and advanced materials characterization, this book is particularly relevant to graduate students, academic researchers, and professionals specializing in materials science, solid-state physics, nanotechnology, and semiconductor engineering.
eBook details
- Author (s): Vesna Ribić
- Publication year: 2026
- Publisher: Springer
- Language: English
- ISBN: 3032294444, 9783032294449, B0HQMN47HF, 9783032294456
- Pages: 130
- Book format: PDF
- File size: 6 MB
